Determination of oscillations of the density of energy states in nanoscale semiconductor materials at different temperatures and quantizing magnetic fields

Authors

  • U.I. Erkaboev Namangan Institute of Engineering and Technology,160115, Namangan, Uzbekistan
  • R.G. Rakhimov Namangan State University,160107, Namangan, Uzbekistan
  • N.Y.Azimova

Keywords:

Nanoscale, semiconductor, quantum well, mathematical model

Abstract

At present, the interest in applied and fundamental research in the field of condensed matter physics has shifted from bulk materials to nanoscale semiconductor structures. Of particular interest are the properties of the energy spectrum of charge carriers in low-dimensional semiconductor structures exposed to a quantizing magnetic field. Quantization of the energy levels of free electrons and holes in a quantizing magnetic field leads to a significant change in the form of oscillations of the density of energy states in two-dimensional semiconductor structures. Thus, in this manuscript, we investigated the effect of the temperature and thickness of the quantum well on the oscillations of the density of energy states in the conduction band of nanoscale semiconductor structures. A new mathematical model has been developed for calculating the temperature dependence of the oscillations of the density of states in a rectangular quantum well under the influence of a transverse quantizing magnetic field

Downloads

Published

2023-02-23

How to Cite

U.I. Erkaboev, R.G. Rakhimov, & N.Y.Azimova. (2023). Determination of oscillations of the density of energy states in nanoscale semiconductor materials at different temperatures and quantizing magnetic fields. Global Scientific Review, 12, 33–49. Retrieved from http://scienticreview.com/index.php/gsr/article/view/156

Issue

Section

Articles

Similar Articles

1 2 3 4 > >> 

You may also start an advanced similarity search for this article.